unisonic technologies co., ltd 2sd669/a npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2008 unisonic technologies co., ltd qw-r204-005,f bipolar power general purpose transistor ? applications * low frequency power amplifier complementary pair with utc 2sb649/a lead-free: 2sd669l/2sd669al halogen-free: 2sd669g/2sd669ag ? ordering information ordering number pin assignment normal lead free plating halogen-free package 1 2 3 packing 2sd669-x-aa3-r 2sd669l-x-aa3-r 2sd669g-x-aa3-r sot-223 b c e tape reel 2sd669-x-ab3-r 2sd669l-x-ab3-r 2sd669g-x-ab3-r sot-89 b c e tape reel 2sd669-x-t60-k 2sd669l-x-t60-k 2s d669g-x-t60-k to-126 e c b bulk 2sd669-x-t6c-k 2sd669l-x-t6c-k 2sd6 69g-x-t6c-k to-126c e c b bulk 2sd669-x-t92-b 2sd669l-x-t92-b 2sd6 69g-x-t92-b to-92 e c b tape box 2sd669-x-t92-k 2sd669l-x-t92-k 2s d669g-x-t92-k to-92 e c b bulk 2sd669-x-t9n-b 2sd669l-x-t9n-b 2sd669g -x-t9n-b to-92nl e c b tape box 2sd669-x-t9n-k 2sd669l-x-t9n-k 2sd6 69g-x-t9n-k to-92nl e c b bulk 2sd669-x-t9n-r 2sd669l-x-t9n-r 2sd669g -x-t9n-r to-92nl e c b tape reel 2sd669-x-tm3-t 2sd669l-x-tm3-t 2sd669g-x-tm3-t to-251 e c b tube 2sd669-x-tn3-r 2sd669l-x-tn3-r 2sd6 69g-x-tn3-r to-252 b c e tape reel 2sd669-x-tn3-t 2sd669l-x-tn3-t 2sd669g-x-tn3-t to-252 b c e tube
2sd669/a npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r204-005,f ? ordering information(cont.) ordering number pin assignment normal lead free plating halogen-free plating package 1 2 3 packing 2sd669a-x-aa3-r 2sd669al-x-aa3-r 2sd669ag-x-aa3-r sot-223 b c e tape reel 2sd669a-x-ab3-r 2sd669al-x-ab3-r 2sd669ag-x-ab3-r sot-89 b c e tape reel 2sd669a-x-t60-k 2sd669al-x-t60-k 2sd669ag-x-t60-k to-126 e c b bulk 2sd669a-x-t6c-r 2sd669al-x-t6c-r 2sd669ag-x-t6c-r to-126c e c b bulk 2sd669a-x-t92-b 2sd669al-x-t92-b 2sd669ag-x-t92-b to-92 e c b tape box 2sd669a-x-t92-k 2sd669al-x-t92-k 2sd669ag-x-t92-k to-92 e c b bulk 2sd669a-x-t9n-b 2sd669al-x-t9n-b 2sd669ag-x-t9n-b to-92nl e c b tape box 2sd669a-x-t9n-k 2sd669al-x-t9n-k 2sd669ag-x-t9n-k to-92nl e c b bulk 2sd669a-x-t9n-r 2sd669al-x-t9n-r 2sd669ag-x-t9n-r to-92nl e c b tape reel 2sd669a-x-tm3-t 2sd669al-x-tm3-t 2sd669ag-x-tm3-t to-251 e c b tube 2sd669a-x-tn3-r 2sd669al-x-tn3-r 2sd669ag-x-tn3-r to-252 b c e tape reel 2sd669a-x-tn3-t 2sd669al-x-tn3-t 2sd669ag-x-tn3-t to-252 b c e tube
2sd669/a npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r204-005,f ? absolute maximum rating ( ta= 25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 180 v 2sd669 120 collector-emitter voltage 2sd669a v ceo 160 v emitter-base voltage v ebo 5 v collector current i c 1.5 a collector peak current l c(peak) 3 a collector power dissipation sot-223 0.5 w collector power dissipation to-126 p d 1 w junction temperature t j +150 storage temperature t stg -40 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector to base breakdown voltage bv cbo i c =1ma, i e =0 180 v 2sd669 120 collector to emitter breakdown voltage 2sd669a bv ceo i c =10ma, r be = 160 v emitter to base breakdown voltage bv ebo i e =1ma, i c =0 5 v collector cut-off current i cbo v cb =160v, i e =0 10 a h fe1 v ce =5v, i c =150ma (note) 60 320 dc current gain h fe2 v ce =5v, i c =500ma (note) 30 collector-emitter satu ration voltage v ce(sat) i c =600ma, i b =50ma (note) 1 v base-emitter voltage v be v ce =5v, i c =150ma (note) 1.5 v current gain bandwidth product f t v ce =5v, i c =150ma (note) 140 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 14 pf note: pulse test. ? classification of h fe1 rank b c d range 60-120 100-200 160-320
2sd669/a npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r204-005,f ? typical characteristics dc current transfer ratio, h fe collector to emitter saturation voltage, v ce(sat) (v) 25 t c = - 2 0 i c =10i b 2 5 7 5 1 3 10 30 100 300 1,000 0 0.2 0.4 0.6 0.8 1.0 1.2 collector current, i c (ma) base to emitter sa turation voltage vs. collector current 10 30 100 300 1,000 collector current, i c (ma) 0 40 80 120 160 200 240 gain bandwidth product vs. collector current v ce =5v ta=25 1 510 50 20 100 2 2 5 10 20 50 100 200 collector to base voltage, v cb (v) collector output capacitance vs. collector to base voltage f=1mhz i e =0 dc operation (t c =25 ) (13.3v, 1.5a) 40v, 0.5a (120v, 0.04a) (160v, 0.02a) 2sd669 2sd669a area of safe operation collector to emitter voltage, v ce (v) 1310 100 300 0.01 0.03 0.1 0.3 1.0 3 30 collector current, i c (a)
2sd669/a npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r204-005,f ? typical characteristics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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